Product description
The TPS28226 is a high-speed driver for N-channel MOSFETs in complementary half-bridge configurations. Featuring adaptive dead-time control and low propagation delay, it is optimized for high-current applications such as multiphase DC/DC converters. The device enables high efficiency, compact size, and low EMI emissions.
Efficiency is achieved through gate drive voltages up to 8.8 V, 14 ns adaptive dead-time, 14 ns propagation delay, and 2 A source / 4 A sink drive capability. The low-side driver’s 0.4 Ω impedance holds the gate below threshold during high dV/dt transitions, preventing shoot-through. An internal bootstrap diode allows the use of N-channel MOSFETs on the high side.
Features:
- Drives two N-channel MOSFETs with 14 ns adaptive dead time
- Gate drive voltage: 4.5 V to 8.8 V (optimized for 7–8 V)
- Power input voltage: 3 V to 27 V
- PWM input range: 2.0 V to 13.2 V amplitude
- Capable of driving up to 40 A per phase
- High-speed operation: 14 ns delay, 10 ns rise/fall time, FSW up to 2 MHz
- Supports PWM pulses down to <30 ns
- Low-side sink resistance of 0.4 Ω prevents dV/dt-induced shoot-through
- 3-state PWM input for power stage shutdown
- Shared ENABLE/Power-Good pin
- Thermal shutdown and UVLO protection
- Integrated bootstrap diode
Applications:
- Multiphase DC-to-DC converters with analog or digital control
- Desktop and server VRMs and EVRDs
- Portable and notebook power regulators
- Synchronous rectification for isolated power supplies