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Bipolära (‏206)
FET-transistorer (‏132)

Produkturval

  BS170 TO-92 N-ch 60V 500mA
1 - 8.00
10 - 7.20
25 - 6.00
100 - 4.80
  MJ15003 TO-3 NPN 140V 20A
1 - 41.25
10 - 37.13
  2N5322 TO-39 PNP 100V 2A
1 - 39.00
10 - 35.10
  BD677 TO-126 NPN 60V 4A
1 - 18.14
10 - 16.32
25 - 13.60
  BD139-10 TO-126 NPN 80V 1.5A
1 - 8.00
10 - 7.20
25 - 6.00
100 - 4.80
  BD140-16 TO-126 PNP 80V 1.5A
1 - 8.00
10 - 7.20
25 - 6.00
100 - 4.80
  IRL520N TO-220 N-ch 100V 10A
FET-transistor för logiknivå (3-5V).
1 - 12.00
10 - 10.80
25 - 9.00
  MJ802G TO-3 NPN 90V 30A
Effektransistor för slutsteg och förstärkare upp till 100W. PNP-komplement: MJ4502G ( art.nr: 41012078 )
1 - 59.00
10 - 44.25
  FDV303N SOT-23 N-ch 25V 0.68A
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. 25 V, 0.68 A continuous, 2 A Peak. RDS(ON) = 0.45 W @ VGS = 4.5 V RDS(ON) = 0.6 W @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. Alternative to TN0200T and TN0201T.
1 - 2.00
10 - 1.80
25 - 1.50
100 - 1.20
  STD03P TO-3P-5 PNP 160V 15A
STD03P är en kraftfull PNP-darlingtontransistor i TO-3P-kapsel. Lämplig för audioförstärkare. Transistorn har inbyggt bas-emittermotstånd samt temperaturkompenseringsdiod. Komplementpar med STD03N (41015082).
99.00