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Bipolära (‏208)
FET-transistorer (‏130)
IGBT (‏7)

Produkturval

  TIP141 TO-218 NPN 80V 10A
1 - 18.75
10 - 16.88
25 - 14.06
100 - 11.25
  2N3553 TO-39 NPN 40V 1A
1 - 49.00
10 - 41.65
100 - 29.40
  IRFZ48N TO-220 N-ch 55V 64A
1 - 42.00
10 - 37.80
25 - 31.50
  FDS6911 SO-8 N-ch 20V 7.5A
1 - 12.00
10 - 10.80
25 - 9.00
  IRF740PBF TO-220 N-ch 400V 10A
1 - 24.75
10 - 22.28
25 - 18.56
  STP55NF06L TO-220 N-ch 60V 55A
FET-transistor för logiknivå (5V+).
1 - 15.12
10 - 13.61
  IRL520N TO-220 N-ch 100V 10A
FET-transistor för logiknivå (3-5V).
1 - 12.00
10 - 10.80
25 - 9.00
  FDV303N SOT-23 N-ch 25V 0.68A
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. 25 V, 0.68 A continuous, 2 A Peak. RDS(ON) = 0.45 W @ VGS = 4.5 V RDS(ON) = 0.6 W @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. Alternative to TN0200T and TN0201T.
1 - 2.00
10 - 1.80
25 - 1.50
100 - 1.20
  MJE13005 TO-220 NPN 400V 4A
MJE13005 är en NPN-transistor i TO-220-kapsel. Lämplig för switchade nätdelar, motorstyrning och andra applikationer med snabb switchtid och hög spänning/ström.
30.00