Transistors

Transistors Transistors have three legs, unlike diodes which only have two... :-)

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Featured products

  BC547C TO-92 NPN 45V 0.1A
NPN-transistor in TO-92-package. Used for signal amplification and switching.
1 - 1.25
25 - 0.94
100 - 0.63
1000 - 0.43
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  IRF510S D2PAK N-ch HEXFET 100V 5.6A
1 - 12.00
25 - 9.00
100 - 7.20
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  2N5038 TO-3 NPN 90V 20A 140W
2N5038 is a powerful and fast NPN transistor in TO-3 package. Suitable for switched power supplies and wide band amplifiers.
1 - 199.00
10 - 149.25
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  2N5401 TO-92 PNP 600mA
1 - 2.10
10 - 1.89
25 - 1.58
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  2SC1775 TO-92 NPN 90V 50mA
1 - 12.00
10 - 10.80
25 - 9.00
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  TIP137 TO-220 PNP Darlington 100V 8A
1 - 18.10
10 - 16.29
25 - 13.57
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  2N2907A TO-18
1 - 16.67
10 - 15.00
25 - 12.50
100 - 10.00
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  2SD718 TO-3P
1 - 28.00
10 - 25.20
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  FDV303N SOT-23 N-ch 25V 0.68A
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. 25 V, 0.68 A continuous, 2 A Peak. RDS(ON) = 0.45 W @ VGS = 4.5 V RDS(ON) = 0.6 W @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. Alternative to TN0200T and TN0201T.
1 - 2.00
10 - 1.80
25 - 1.50
100 - 1.20
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