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Bipolära (‏210)
FET-transistorer (‏129)

Produkturval

  BC557B TO-92 PNP 50V 100mA
PNP-transistor i TO-92-kapsel.   Används för signalförstärkning och som brytare.
1 - 1.25
25 - 0.94
100 - 0.63
1000 - 0.43
  PHP55N03LT TO-220 N-ch 25V 55A
1 - 39.00
25 - 29.25
100 - 19.50
  TIP32A TO-220 PNP 40V 3A
1 - 8.00
10 - 7.20
25 - 6.00
  BC183B TO-92 NPN 30V 100mA
1 - 3.00
10 - 2.70
25 - 2.25
  MJE2955T TO-220 PNP 60V 10A
1 - 9.00
10 - 8.10
25 - 6.75
  IRL640PBF TO-220 N-ch 200V 17A
1 - 37.80
10 - 34.02
25 - 28.35
  BC327-40 TO-92 PNP 45V 500mA
1 - 1.50
10 - 1.35
25 - 1.13
100 - 0.90
  MJE172G TO-126 PNP 80V 3A
1 - 7.00
10 - 6.30
25 - 5.25
100 - 4.20
  2N5551 TO-92 NPN 150V 600mA
Högspänningstransistor i TO-92 kapsel. Max spänning (C-E): 150V Max kollekttorström (Ic): 0.6A Max effekt: 625mW
1 - 2.00
10 - 1.80
25 - 1.50
  FDV303N SOT-23 N-ch 25V 0.68A
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions. This device is designed especially for application in battery circuits using either one lithium or three cadmium or NMH cells. It can be used as an inverter or for high-efficiency miniature discrete DC/DC conversion in compact portable electronic devices like cellular phones and pagers. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. 25 V, 0.68 A continuous, 2 A Peak. RDS(ON) = 0.45 W @ VGS = 4.5 V RDS(ON) = 0.6 W @ VGS= 2.7 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Compact industry standard SOT-23 surface mount package. Alternative to TN0200T and TN0201T.
1 - 2.00
10 - 1.80
25 - 1.50
100 - 1.20